N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF To L-BAND SINGLE-END POWER AMPLIFIER

The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station Amplifier Analog/Digital TV-transmitters, and the other PAs. This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi Gate lateral MOS FET), and its nitride surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability. By California Eastern Laboratories
NE55410GR 's PackagesNE55410GR 's pdf datasheet



NE55410GR Pinout, Pinouts
NE55410GR pinout,Pin out
This is one package pinout of NE55410GR,If you need more pinouts please download NE55410GR's pdf datasheet.

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