RF Semiconductors

NEC's NE651R479A is a GaAs HJ-FET designed for medium power mobile Communications Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 V with high linear gain, high effciency, and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. By California Eastern Laboratories
NE651R479A 's PackagesNE651R479A 's pdf datasheet



NE651R479A Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NE651R479A circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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