RF Semiconductors NEC\'s NPN SiGe HIGH FREQUENCY TRANSISTOR

NPN Silicon Germanium RF Transistor
NEC's NESG2021M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliers, medium power ampliers, and Oscillators NECs low prole, at lead style M05 Package provides high frequency performance for compact Wireless designs. By California Eastern Laboratories
NESG2021M05 's PackagesNESG2021M05 's pdf datasheet



NESG2021M05 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NESG2021M05 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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NESG2021M05 Pb-Free NESG2021M05 Cross Reference NESG2021M05 Schematic NESG2021M05 Distributor
NESG2021M05 Application Notes NESG2021M05 RoHS NESG2021M05 Circuits NESG2021M05 footprint