NEC\'s NPN SiGe HIGH FREQUENCY TRANSISTORNEC's NESG2101M05 is fabricated using NECs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise ampliers,
medium power ampliers, and Oscillators
NECs low prole, at lead style M05 Package provides high
frequency performance for compact Wireless designs. By California Eastern Laboratories
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| NESG2101M05 Pb-Free | NESG2101M05 Cross Reference | NESG2101M05 Schematic | NESG2101M05 Distributor |
| NESG2101M05 Application Notes | NESG2101M05 RoHS | NESG2101M05 Circuits | NESG2101M05 footprint |
