NEC\'s NPN SiGe HIGH FREQUENCY TRANSISTOR

NEC's NESG2101M05 is fabricated using NECs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliers, medium power ampliers, and Oscillators NECs low prole, at lead style M05 Package provides high frequency performance for compact Wireless designs. By California Eastern Laboratories
NESG2101M05 's PackagesNESG2101M05 's pdf datasheet



NESG2101M05 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
NESG2101M05 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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