30 W, 2300-2900 MHz, 28V, GaN HEMT For WiMAX

Crees CGH27030F is a gallium nitride (GaN) high electron mobility Transistor (HEMT) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.3- 2.9GHz WiMAX and BWA amplifer applications. The Transistor is supplied in a ceramic/metal fange package. By Cree, Inc.
CGH27030F 's PackagesCGH27030F 's pdf datasheet



CGH27030F Pinout, Pinouts
CGH27030F pinout,Pin out
This is one package pinout of CGH27030F,If you need more pinouts please download CGH27030F's pdf datasheet.

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