60 W, 2300-2900 MHz, 28V, GaN HEMT For WiMAX

Crees CGH27060F is a gallium nitride (GaN) high electron mobility Transistor (HEMT) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and BWA amplifer applications. The Transistor is supplied in a ceramic/metal fange package. By Cree, Inc.
CGH27060F 's PackagesCGH27060F 's pdf datasheet

CGH27060F Pinout, Pinouts
CGH27060F pinout,Pin out
This is one package pinout of CGH27060F,If you need more pinouts please download CGH27060F's pdf datasheet.

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