20 W, 2300-2700 MHz, GaN HEMT For WiMAX

Crees CGH27120F is a gallium nitride (GaN) high electron mobility Transistor (HEMT) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the CGH27120F ideal for 2.3-2.7GHz WiMAX and BWA amplifer applications. The Transistor is supplied in a ceramic/metal fange package. By Cree, Inc.
CGH27120F 's PackagesCGH27120F 's pdf datasheet

CGH27120F Pinout, Pinouts
CGH27120F pinout,Pin out
This is one package pinout of CGH27120F,If you need more pinouts please download CGH27120F's pdf datasheet.

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