15 W, 3300-3900 MHz, 28V, GaN HEMT For WiMAX

Crees CGH35015 is a gallium nitride (GaN) high electron mobility Transistor designed specifcally for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high effciency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifer applications. The Transistor is available in both screw-down, fange and solder-down, pill packages. By Cree, Inc.
CGH35015 's PackagesCGH35015 's pdf datasheet

CGH35015 Pinout, Pinouts
CGH35015 pinout,Pin out
This is one package pinout of CGH35015,If you need more pinouts please download CGH35015's pdf datasheet.

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