30 W, 3300-3900 MHz, 28V, GaN HEMT For WiMAX

Crees CGH35030F is a gallium nitride (GaN) high electron mobilit Transistor (HEMT) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.3- 3.9GHz WiMAX and BWA amplifer applications. The Transistor is supplied in a ceramic/metal fange package. By Cree, Inc.
CGH35030F 's PackagesCGH35030F 's pdf datasheet



CGH35030F Pinout, Pinouts
CGH35030F pinout,Pin out
This is one package pinout of CGH35030F,If you need more pinouts please download CGH35030F's pdf datasheet.

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