60 W, 3300-3900 MHz, 28V, GaN HEMT For WiMAX

Crees CGH35060F is a gallium nitride (GaN) high electron mobility Transistor (HEMT) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and BWA amplifer applications. The Transistor is supplied in a ceramic/metal fange package. By Cree, Inc.
CGH35060F 's PackagesCGH35060F 's pdf datasheet



CGH35060F Pinout, Pinouts
CGH35060F pinout,Pin out
This is one package pinout of CGH35060F,If you need more pinouts please download CGH35060F's pdf datasheet.

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