0 W, RF Power GaN HEMT

Crees CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility Transistor (HEMT). The CGH40010 operating from a 28 volt rail, offers a general purpose, Broadband solution to a variety of RF and Microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth capabilities making the CGH40010 ideal for linear and compressed amplifer circuits. The Transistor is available in both screw-down, fange and solder- down, pill packages. By Cree, Inc.
CGH40010 's PackagesCGH40010 's pdf datasheet

CGH40010 Pinout, Pinouts
CGH40010 pinout,Pin out
This is one package pinout of CGH40010,If you need more pinouts please download CGH40010's pdf datasheet.

CGH40010 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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