25 W, Rf Power Gan Hemt , Inc

Crees CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility Transistor (HEMT). The CGH40025 operating from a 28 volt rail, offers a general purpose, Broadband solution to a variety of RF and Microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth capabilities making the CGH40025 ideal for linear and compressed amplifer circuits. The Transistor is available in a screw-down, fange package. By Cree, Inc.
CGH40025F 's PackagesCGH40025F 's pdf datasheet

CGH40025F Pinout, Pinouts
CGH40025F pinout,Pin out
This is one package pinout of CGH40025F,If you need more pinouts please download CGH40025F's pdf datasheet.

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