35 W, RF Power GaN HEMTCrees CGH40035 is an unmatched, gallium nitride (GaN) high electron
mobility Transistor (HEMT). The CGH40035 operating from a 28 volt
rail, offers a general purpose, Broadband solution to a variety of RF and
Microwave applications. GaN HEMTs offer high effciency, high gain and
wide bandwidth capabilities making the CGH40035 ideal for linear and
compressed amplifer circuits. The Transistor is available in a screw-
down, fange package. By Cree, Inc.
|
|
CGH40035 Pb-Free | CGH40035 Cross Reference | CGH40035 Schematic | CGH40035 Distributor |
CGH40035 Application Notes | CGH40035 RoHS | CGH40035 Circuits | CGH40035 footprint |