35 W, RF Power GaN HEMT

Crees CGH40035 is an unmatched, gallium nitride (GaN) high electron mobility Transistor (HEMT). The CGH40035 operating from a 28 volt rail, offers a general purpose, Broadband solution to a variety of RF and Microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth capabilities making the CGH40035 ideal for linear and compressed amplifer circuits. The Transistor is available in a screw- down, fange package. By Cree, Inc.
CGH40035 's PackagesCGH40035 's pdf datasheet

CGH40035 Pinout, Pinouts
CGH40035 pinout,Pin out
This is one package pinout of CGH40035,If you need more pinouts please download CGH40035's pdf datasheet.

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