90 W, RF Power GaN HEMTCrees CGH40090PP is an unmatched, gallium nitride (GaN) high
electron mobility Transistor (HEMT). The CGH40090PP operating
from a 28 volt rail, offers a general purpose, Broadband solution to
a variety of RF and Microwave applications. GaN HEMTs offer high
effciency, high gain and wide bandwidth capabilities making the
CGH40090PP ideal for linear and compressed amplifer circuits.
The Transistor is available in a 4-lead fange package. By Cree, Inc.
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| CGH40090PP Pb-Free | CGH40090PP Cross Reference | CGH40090PP Schematic | CGH40090PP Distributor |
| CGH40090PP Application Notes | CGH40090PP RoHS | CGH40090PP Circuits | CGH40090PP footprint |
