90 W, RF Power GaN HEMT

Crees CGH40090PP is an unmatched, gallium nitride (GaN) high electron mobility Transistor (HEMT). The CGH40090PP operating from a 28 volt rail, offers a general purpose, Broadband solution to a variety of RF and Microwave applications. GaN HEMTs offer high effciency, high gain and wide bandwidth capabilities making the CGH40090PP ideal for linear and compressed amplifer circuits. The Transistor is available in a 4-lead fange package. By Cree, Inc.
CGH40090PP 's PackagesCGH40090PP 's pdf datasheet



CGH40090PP Pinout, Pinouts
CGH40090PP pinout,Pin out
This is one package pinout of CGH40090PP,If you need more pinouts please download CGH40090PP's pdf datasheet.

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