30 W, 5500-5800 MHz, 28V, GaN HEMT For WiMAX

Crees CGH55030F is a gallium nitride (GaN) high electron mobility Transistor (HEMT) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the CGH55030F ideal for 5.5-5.8GHz WiMAX and BWA amplifer applications. The Transistor is supplied in a ceramic/metal fange package. Based on appropriate external match adjustment, the CGH55030F is suitable for 4.9 - 5.5 GHz applications as well. By Cree, Inc.
CGH55030F 's PackagesCGH55030F 's pdf datasheet



CGH55030F Pinout, Pinouts
CGH55030F pinout,Pin out
This is one package pinout of CGH55030F,If you need more pinouts please download CGH55030F's pdf datasheet.

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