5 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifer

Crees CMPA0060005F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic Microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs Transistors This MMIC employs a distributed (traveling-wave) amplifer design approach, enabling extremely wide bandwidths to be achieved in a small footprint screw-down package featuring a copper-tungsten heat sink. By Cree, Inc.
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CMPA0060005F Pinout, Pinouts
CMPA0060005F pinout,Pin out
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