25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifer

Crees CMPA2560025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic Microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs Transistors This MMIC contains a two-stage reactively matched amplifer enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper-Tungsten heat-sink. By Cree, Inc.
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CMPA2560025F Pinout, Pinouts
CMPA2560025F pinout,Pin out
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