0 W, SiC RF Power MESFET

Crees CRF24010 is an unmatched silicon carbide (SiC) RF Power Metal- Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. SiC MESFETs offer greater effciency, greater power density, and wider bandwidths compared to Si and GaAs Transistors By Cree, Inc.