8m (512k X 16) Static Ram Semiconductor

The CY62157DV20 is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an Automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device CAN also be put into standby mode when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW or both BHE and BLE are HIGH. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW, outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or during a write operation (Chip Enable 1 (CE1) LOW and Chip Enable 2 (CE2) HIGH and WE LOW). By Cypress Semiconductor Corp.
CY62157DV20 's PackagesCY62157DV20 's pdf datasheet
CY62157DV20L-55BVI BGA
CY62157DV20LL-55BVI BGA
CY62157DV20L-70BVI BGA
CY62157DV20LL-70BVI BGA




CY62157DV20 Pinout, Pinouts
CY62157DV20 pinout,Pin out
This is one package pinout of CY62157DV20,If you need more pinouts please download CY62157DV20's pdf datasheet.

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CY62157DV20 Application Notes CY62157DV20 RoHS CY62157DV20 Circuits CY62157DV20 footprint
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