• Product pinout
  • Description
  • K4T2G044QA,2Gb A-die DDR2 SDRAM Specification
  • The 2Gb DDR2 SDRAM K4T2G044QA K4T2G084QA is organized as a 64Mbit x 4 I/Os x 8 banks or 32Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up / to 800Mb/sec/pin (DDR2-800) for general ...
  • K4T2G084QA,2Gb A-die DDR2 SDRAM Specification
  • The 2Gb DDR2 SDRAM K4T2G044QA K4T2G084QA is organized as a 64Mbit x 4 I/Os x 8 banks or 32Mbit x 8 I/Os x 8banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general ...
  • K4T1G044QQ,1Gb Q-die DDR2 SDRAM Specification
  • The 1Gb DDR2 SDRAM K4T1G044QQ K4T1G084QQ K4T1G164QQ is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to ...
  • K4T1G084QQ,1Gb Q-die DDR2 SDRAM Specification
  • The 1Gb DDR2 SDRAM K4T1G044QQ K4T1G084QQ K4T1G164QQ is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to 800Mb/sec/pin ...
  • K4T1G164QQ,1Gb Q-die DDR2 SDRAM Specification
  • The 1Gb DDR2 SDRAM K4T1G044QQ K4T1G084QQ K4T1G164QQ is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to 800Mb/sec/pin ...
  • K4T1G084QD,1Gb D-die DDR2 SDRAM Specification
  • The 1Gb DDR2 SDRAM K4T1G084QD K4T1G164QD is organized as a 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general ...
  • K4T1G164QD,1Gb D-die DDR2 SDRAM Specification
  • The 1Gb DDR2 SDRAM K4T1G084QD K4T1G164QD is organized as a 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general ...
  • K4T1G044QC,1Gb C-die DDR2 SDRAM Specification
  • The 1Gb DDR2 SDRAM K4T1G044QC K4T1G084QC is organized as a 32Mbit x 4 I/Os x 8 banks device. This synchronous device achieves high speed dou- ble-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed ...
  • K4T1G084QC,1Gb C-die DDR2 SDRAM Specification
  • The 1Gb DDR2 SDRAM K4T1G044QC K4T1G084QC is organized as a 32Mbit x 4 I/Os x 8 banks device. This synchronous device achieves high speed dou- ble-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed ...
  • K4T51043QG,512Mb G-die DDR2 SDRAM Specification
  • The 512Mb DDR2 SDRAM K4T51043QG K4T51083QG K4T51163QG is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to ...
  • K4T51083QG,512Mb G-die DDR2 SDRAM Specification
  • The 512Mb DDR2 SDRAM K4T51043QG K4T51083QG K4T51163QG is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to ...
  • K4T51163QG,512Mb G-die DDR2 SDRAM Specification
  • The 512Mb DDR2 SDRAM K4T51043QG K4T51083QG K4T51163QG is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to ...
  • K4T51043QE,512Mb E-die DDR2 SDRAM Specification
  • The 512Mb DDR2 SDRAM K4T51043QE K4T51083QE K4T51163QE is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to ...
  • K4T51083QE,512Mb E-die DDR2 SDRAM Specification
  • The 512Mb DDR2 SDRAM K4T51043QE K4T51083QE K4T51163QE is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to ...
  • K4T51163QE,512Mb E-die DDR2 SDRAM Specification
  • The 512Mb DDR2 SDRAM K4T51043QE K4T51083QE K4T51163QE is organized as a 32Mbit x 4 I/Os x 4 banks, 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double- data-rate transfer rates of up to ...
  • K4T56163QI,256Mb I-die DDR2 SDRAM Specification
  • The 256Mb DDR2 SDRAM is organized as a 4Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed dou- ble-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications. The chip is designed to comply with the ...
  • HYMP112F72CP8,240pin Fully Buffered DDR2 SDRAM DIMMs Based On
  • This Hynixs Fully Buffered DIMM is a high-bandwidth & large capacity channel solution that has a narrowhost interface. Hynixs FB-DIMM features novel architecture including the Advanced Memory Buffer that is olates the DDR2 SDRAMs from the channel. This single ...
  • HYMP112P72CP8,240pin Registered DDR2 SDRAM DIMMs Based On 1Gb
  • This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 1Gb version C DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb ver-sion C based Registered DDR2 DIMM series provide a high ...
  • HYMP564P72CP8L,240pin DDR2 VLP Registerd DIMMs Based On 512 Mb
  • This Hynix DDR2 VLP(Very Low Profile) registered Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb C ver.based VLP Registered DIMM series ...
  • HY57V641620ET,64Mb Synchronous DRAM Based On 1M X 4Bank
  • The Hynix HY57V641620E(L/S)T(P) series is a 67,108,864bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V641620E(L/S)T(P) is organized as 4banks of1,048,576x16. HY57V641620E(L/S)T(P) is ...