HEXFET® Power MOSFETSeventh Generation HEXFET Power MOSFETs DMFP160N04N from International
Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications. By LTO-DMS Semiconductors
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DMFP160N04N Pb-Free | DMFP160N04N Cross Reference | DMFP160N04N Schematic | DMFP160N04N Distributor |
DMFP160N04N Application Notes | DMFP160N04N RoHS | DMFP160N04N Circuits | DMFP160N04N footprint |