Fifth Generation HEXFETs DMFP82N075N from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. By LTO-DMS Semiconductors
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DMFP82N075N Pinout, Pinouts
DMFP82N075N pinout,Pin out
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