® HEXFET Power MOSFETAdvanced HEXFET Power MOSFETs DMFP84N06N from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known
for, provides the designer with an extremely
efficient and reliable device for use in a wide variety
of applications. By LTO-DMS Semiconductors
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| DMFP84N06N Pb-Free | DMFP84N06N Cross Reference | DMFP84N06N Schematic | DMFP84N06N Distributor |
| DMFP84N06N Application Notes | DMFP84N06N RoHS | DMFP84N06N Circuits | DMFP84N06N footprint |
