The timing diagrams in Figure 1 illustrate XDR DRAM device write and read transactions. There are three sets of pins used for normal
memory access transactions: CFM/CFMN clock pins, RQ11..0 request pins, and DQ15..0/DQN15..0 data pins. The N appended ...
,
The RDRAM device is a general purpose high-perfor-
mance memory device suitable for use in a broad range of
applications including computer memory, graphics, video,
and any other application where high bandwidth and low
latency are required.
The ...
288Mbit RDRAM 512K x 18bit x 32s banks , K4R881869E The 288Mbit RDRAM devices are extremely high-speed
CMOS DRAMs organized as 16M words by 18 bits. The use
of Rambus Signaling Level (RSL) technology permits up to
1200 MHz transfer rates while using ...
K4R271669H The 128Mbit RDRAM devices are extremely high-speed
CMOS DRAMs organized as 8M words by 16. The use of
Rambus Signaling Level (RSL) technology permits 800MHz
transfer rates while using conventional system and board
design technologies. ...
288Mb RLDRAM Component : MT49H16M18BM-25 MT49H16M18BM-25 MT49H32M9 32 Meg x 9 x 8 Bank
MT49H16M18 16 Meg x 18 x 8 Bank
MT49H8M36 8 Meg x 36 x 8 Bank ...
The MSM5117400F
is a 4,194,304-word 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS
technology. The MSM5117400F achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer ...
The MSM5117405F
is a 4,194,304-word 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS
technology. The MSM5117405F achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer ...
The MSM5118160F
is a 1,048,576-word 16-bit dynamic RAM fabricated in Okis silicon-gate CMOS
technology. The MSM5118160F achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer ...
The MSM5118165F
is a 1,048,576-word 16-bit dynamic RAM fabricated in Okis silicon-gate CMOS
technology. The MSM51V18165F achieves high integration, high-speed operation,
and low-power consumption because Oki manufactures the device in a ...
The MSM514252A is
an 1-Mbit CMOS multiport DRAM composed of a 262,144-word by 4-bit dynamic RAM,
and a 512-word by 4-bit static serial access memory, SAM port. The RAM port and
SAM port operate independently and asynchronously.
The MSM514252A supports ...
The
MSM514260C/CSL is a 262,144-word x 16-bit dynamic RAM fabricated in Oki\'s
silicon-gate CMOS technology. The MSM514260C/CSL achieves high integration,
high-speed operation, and low-power consumption because Oki manufactures the
device in a ...
The MSM514260E is
a 262,144-word x 16-bit dynamic RAM fabricated in Okis silicon-gate CMOS
technology. The MSM514260E achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer ...
The
MSM514265C/MSM514265CSL is a 262,144-word x 16-bit dynamic RAM fabricated in Oki\'s
silicon-gate CMOS technology. The MSM514265C/CSL achieves high integration,
high-speed operation, and low-power consumption because Oki manufactures the
device in a ...
The MSM514265E is
a 262,144-word x 16-bit dynamic RAM fabricated in Okis silicon-gate CMOS
technology. The MSM514265E achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer ...
The MSM514400E is
a 1,048,576-word 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS
technology. The MSM514400E achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer ...
The
MSM514800E/MSM514800ESL is a 524,288-word x 8-bit dynamic RAM fabricated in Oki\'s
silicon-gate CMOS technology. The MSM514800E/MSM514800ESL achieves high integration,
high-speed operation, and low-power consumption because Oki manufactures the ...
The MSM51V17405F
is a 4,194,304-word 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS
technology. The MSM51V17405F achieves high integration, high-speed operation,
and low-power consumption because Oki manufactures the device in a ...
The
MSM51V17805D/ MSM51V17805DSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki\'s
silicon-gate CMOS technology. The MSM51V17805D/ MSM51V17805DSL achieves high integration,
high-speed operation, and low-power consumption because Oki ...
The MSM51V18160F
is a 1,048,576-word x 16-bit dynamic RAM fabricated in Okis silicon-gate CMOS
technology. The MSM51V18160F achieves high integration, high-speed operation,
and low-power consumption because Oki manufactures the device in a ...
The MSM51V18165F
is a 1,048,576-word x 16-bit dynamic RAM fabricated in Okis silicon-gate CMOS
technology. The MSM51V18165F achieves high integration, high-speed operation,
and low-power consumption because Oki manufactures the device in a ...
The MSM5412222 is
a high performance 3-Mbit, 256K x 12-bit, Field Memory. It is especially
designed for high-speed serial access applications such as HDTVs, conventional
NTSC TVs, VTRs, digital movies and Multi-media systems. MSM5412222 is a FRAM for ...
The MSM56V16160F
is a 2-Bank x 524,288-word x 16 bit Synchronous dynamic RAM, fabricated in OKIs
CMOS silicon-gate process technology. The device operates at 3.3V. The inputs
and outputs are LVTTL compatible. ...
The MSM5416273 is
a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM
and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and
asynchronously.
The MSM5416273 supports three types of operations: random access ...
The MSM5416282 is
a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM,
and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
asynchronously.
It supports three types of operations: random access to RAM port, ...
The MSM5416283 is
a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM
and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
asynchronously.
The MSM5416283 supports three types of operations: random access to ...
The MSM548262 is a 2-Mbit CMOS multiport DRAM composed of a 262,144-word by 8-bit dynamic RAM and a 512-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously.
It supports three types of operations: random access to RAM port, high speed ...
The MSM548263 is
a 2-Mbit CMOS multiport DRAM composed of a 262,144-word by 8-bit dynamic RAM,
and a 512-word by 8-bit SAM. Its RAM and SAM operate independently and
asynchronously.
It supports three types of operations: random access to RAM port, high ...
The MSM548331 is
a 2.7-Mbit, 768 bits x 290 lines, Field Memory. Access is done line by line. The
line address must be set each time a line is changed. More than two MSM548331s
can be cascaded directly without any delay devices between them. Cascading ...
The MSM548332 is a 3.3-Mbit, 960 bits x 290 lines, Field Memory. Access is done line by line. The line address must be set each time a line is changed. More than two MSM548332s can be cascaded directly without any delay devices between them. Cascading ...
The MSM54V16273
is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic
RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
asynchronously.
It supports three types of operations: random access to RAM port, ...
The MSM54V16282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit
dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and
asynchronously. ...
The MSM54V16283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
It supports three types of operations: random access to RAM port, high ...
The MSM54V25632A
is a synchronous graphics random access memory organized as 128 K words x 32
bits x 2 banks. This device can operate up to 100 MHz by using synchronous
interface. In addition, it has 8-column Block Write function and Write per bit ...
The
MSM5116160D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki\'s
silicon-gate CMOS technology. The MSM5116160D/DSL achieves high integration,
high-speed operation, and low-power consumption because Oki manufactures the
device in a ...
The
MSM5116165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki\'s
silicon-gate CMOS technology. The MSM5116165D/DSL achieves high integration,
high-speed operation, and low-power consumption because Oki manufactures the
device in a ...
The MSM5117405D
is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki\'s silicon-gate CMOS
technology. The MSM5117405D achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer ...
The
MSM5118160D/ MSM5118160DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki\'s
silicon-gate CMOS technology. The MSM5118160D/ MSM5118160DSL achieves high integration,
high-speed operation, and low-power consumption because Oki ...
The
MSM51V16165D/ MSM51V16165DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki\'s
silicon gate CMOS technology. The MSM51V16165D/ MSM51V16165DSL achieves high integration,
high-speed operation, and low-power consumption because Oki ...
The
MSM51V16405D/ MSM51V16405DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki\'s
silicon-gate CMOS technology. The MSM51V16405D/ MSM51V16405DSL achieves high integration,
high-speed operation, and low-power consumption because Oki ...
The
MSM51V17405D/ MSM51V17405DSL is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki\'s
silicon-gate CMOS technology. The MSM51V17405D/ MSM51V17405DSL achieves high integration,
high-speed operation, and low-power consumption because Oki ...
The
MSM51V17800D/ MSM51V17800DSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki\'s
silicon-gate CMOS technology. The MSM51V17800D/ MSM51V17800DSL achieves high integration,
high-speed operation, and low-power consumption because Oki ...
The MSM5416258B
is a 262,144-word x 16-bit dynamic RAM fabricated in OKI\'s CMOS silicon gate
technology. The MSM5416258B achieves high integration,high-speed operation,and
low-power consumption due to quadruple polysilicon double metal CMOS. The ...
The
MSM54V16258B is a 262,144-word x 16-bit dynamic RAM fabricated in Oki\'s
silicon-gate CMOS technology. The MSM54V16258B/BSL achieves high integration,
high-speed operation, and low-power consumption due to quadruple polysilicon
double metal CMOS. ...
The MSM514100D/ MSM514100DL is a 4,194,304-word ,1-bit dynamic RAM fabricated in Oki\'s silicon-gate
CMOS technology. The MSM514100D/ MSM514100DL achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the ...
The MSM51V4400E is a 1,048,576-word ,4-bit dynamic RAM fabricated in Okis silicon-gate CMO
technology. The MSM51V4400E achieves high integration, high-speed operation, and low-power consumption
because Oki manufactures the device in a quadruple-layer ...
The MSM56V16800F is a 2-Bank ,1,048,576-word ,8-bit Synchronous dynamic RAM fabricated in
Okis silicon-gate CMOS technology. The device operates at 3.3V. The inputs and outputs are LVTT
compatible. ...
The MSM5116400F is a 4,194,304-word ,4-bit dynamic RAM fabricated in Okis silicon-gate CMO
technology. The MSM5116400F achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer ...
The MSM5117800F is a 2,097,152-word ,8-bit dynamic RAM fabricated in Okis silicon-gate CMO
technology. The MSM5117800F achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer ...
The MSM5117805F is a 2,097,152-word ,8-bit dynamic RAM fabricated in Okis silicon-gate CMO
technology. The MSM5117805F achieves high integration, high-speed operation, and low-power
consumption because Oki manufactures the device in a quadruple-layer ...
The MR27V3102L is a 32Mbit Production Programmed Read Only
Memory (P2ROM) with 64 bytes ID block. It offers capability for
unique ID in each P2ROM. It is ideal for applications that require
storage common data and unique ID in each device. ...
The MR27V6302L is a 64Mbit Production Programmed Read Only Memory (P2ROM) with 64 bytes ID block. It
offers capability for unique ID in each P2ROM. It is ideal for applications that require storage common data and
unique ID in each device. ...
The MSM51V17400F is a 4,194,304-word ,4-bit dynamic RAM fabricated in Okis silicon-gat
CMOS technology. The MSM51V17400F achieves high integration, high-speed operation, and low-
power consumption because Oki manufactures the device in a quadruple-layer ...
The MSM51V16405F is a 4,194,304-word 4-bit dynamic RAM fabricated in Okis silicon-gate
CMOS technology. The MSM51V16405F achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer ...
The MSM51V17805F is a 2,097,152-word 8-bit dynamic RAM fabricated in Okis silicon-gate
CMOS technology. The MSM51V17805F achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer ...
The MSM51V16160F is a 1,048,576-word 16-bit dynamic RAM fabricated in Okis silicon-gate
CMOS technology. The MSM51V16160F achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer ...
The MSM51V16165F is a 1,048,576-word 16-bit dynamic RAM fabricated in Okis silicon-gate
CMOS technology. The MSM51V16165F achieves high integration, high-speed operation, and
low-power consumption because Oki manufactures the device in a quadruple-layer ...
The ISSI IS41LV16256B is 262,144 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memory. Both prod-
ucts offer accelerated cycle access EDO Page Mode. EDO
Page Mode allows 512 random accesses within a single row
with access cycle time as short as ...
The ISSI IS41LV16257B is 262,144 x 16-bit high-
performance CMOS Dynamic Random Access
Memories. Fast Page Mode allows 512 random
accesses within a single row with access cycle time as
short as 12 ns per 16-bit word. The Byte Write control,
of upper and ...
The ISSI IS41LV44002B is 4,194,304 x 4-bit high-perfor-
mance CMOS Dynamic Random Access Memory. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 2,048 random ac-
cesses within a single row with access cycle time ...
The ISSI IS41LV16100B is 1,048,576 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 1,024 random ac-
cesses within a single row with access cycle ...
The ISSI IS41LV16105B is 1,048,576 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories. Fast Page
Mode allows 1,024 random accesses within a single row with
access cycle time as short as 20 ns per 16-bit word. The Byte
Write control, of ...
ISSIs 16Mb Synchronous DRAM IS42S16100C1 i
organized as a 524,288-word x 16-bit x 2-bank for
improved performance. The synchronous DRAMs
achieve high-speed data transfer using pipeline
architecture. All inputs and outputs signals refer to the
rising edge ...
ISSI\'s 64Mb Synchronous DRAM IS42S16400B is organized
as 1,048,576 bits x 16-bit x 4-bank for improved
performance. The synchronous DRAMs achieve high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge ...
ISSI\'s 64Mb Synchronous DRAM IS42S32200E is organized
as 524,288 bits x 32-bit x 4-bank for improved performance.
The synchronous DRAMs achieve high-speed data transfer
using pipeline architecture. All inputs and outputs signals
refer to the rising edge ...
's 128Mb Synchronous DRAM achieves high-speed
ISSI
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The 128Mb SDRAM is organized as follows. ...
's 128Mb Synchronous DRAM achieves high-speed
ISSI
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock
input.The 128Mb SDRAM is organized as follows. ...
's 128Mb Synchronous DRAM achieves high-speed
ISSI
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The 128Mb SDRAM is organized as follows. ...
The ISSI IS41C85125 and IS41LV85125 are 512,288 x 8-bit
high-performance CMOS Dynamic Random Access
Memories. Fast Page Mode allows 1024 random accesses
within a single row with access cycle time as short as 12
ns per 8-bit word. ...
The ISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit
high-performance CMOS Dynamic Random Access Memory. Both
products offer accelerated cycle access EDO Page Mode. EDO
Page Mode allows 512 random accesses within a single row with
access cycle time ...
The ISSI IS41C16257 and the IS41LV16257 are 262,144
x 16-bit high-performance CMOS Dynamic Random Access
Memories. Fast Page Mode allows 512 random accesses
within a single row with access cycle time as short as 12 ns
per 16-bit word. The Byte Write ...
The IS41C4400 Series is a 4,194,304 x 4-bit high-performance
CMOS Dynamic Random Access Memory. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 2,048 or 4096
random accesses within a single row with access ...
The IS41C44052
IS41C44054
IS41LV44052
IS41LV44054 Series is a 4,194,304 x 4-bit high-performance
CMOS Dynamic Random Access Memory. The Fast
Page Mode allows 2,048 or 4096 random accesses within
a single row with access cycle time as short as 20 ...
The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high-
performance CMOS Dynamic Random Access Memory.
These devices offer an accelarated cycle access called
EDO Page Mode. EDO Page Mode allows 2,048 random
accesses within a single row with access ...
The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit
high-performance CMOS Dynamic Random Access Memories.
These devices offer an accelerated cycle access called EDO Page
Mode. EDO Page Mode allows 1,024 random accesses within a
single row with ...
The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x
16-bit high-performance CMOS Dynamic Random Access Memo-
ries. Fast Page Mode allows 1,024 random accesses within a single
row with access cycle time as short as 20 ns per 16-bit word. The
Byte Write ...
ISSI\'s 64Mb Synchronous DRAM IS42S16400D is organized
as 1,048,576 bits x 16-bit x 4-bank for improved performance.
The synchronous DRAMs achieve high-speed data transfer
using pipeline architecture. All inputs and outputs signals
refer to the rising edge ...
ISSI\'s 64Mb Synchronous DRAM IS45S16400C1 is
organized as 1,048,576 bits x 16-bit x 4-bank for improved
performance. The synchronous DRAMs achieve high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising ...
The T2316160A is a randomly accessed solid state
memory containing 16,777,216 bits organized in a
x16 configuration. The T2316160A has both
BYTE WRITE and WORD WRITE access cycles
via two CAS pins. It offers Fast Page mode with
Extended Data Output. ...
The T2316162A is a randomly accessed solid state
memory containing 16,777,216 bits organized in a
x16 configuration. The T2316162A has both
BYTE WRITE and WORD WRITE access cycles
via two CAS pins. It offers Fast Page mode with
Extended Data Output. ...
The A42L0616 is a new generation randomly accessed
memory for graphics, organized in a 1,048,576-word by
16-bit configuration. This product can execute Byte Write
and Byte Read operation via two CAS pins.
The A42L0616 offers an accelerated Fast Page ...
The A428316 is a new generation randomly accessed
memory for graphics, organized in a 262,144-word by 16-
bit configuration. This product can execute Byte Write and
Byte Read operation via two CAS pins.
The A428316 offers an accelerated Fast Page Mode ...
The A42L8316 is a new generation randomly accessed
memory for graphics, organized in a 262,144-word by 16-
bit configuration. This product can execute Byte Write and
Byte Read operation via two CAS pins.
The A42L8316 offers an accelerated Fast Page ...
The Samsung M464S0924CT1 is a 8M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
M464S0924CT1 consists of four CMOS 8M x 16 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and
a 2K EEPROM in 8-pin TSSOP package on a ...
The Samsung M464S0924DTS is a 8M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
M464S0924DTS consists of four CMOS 8M x 16 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and
a 2K EEPROM in 8-pin TSSOP package on a ...
The Samsung M464S1724CT1 is a 16M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
M464S1724CT1 consists of eight CMOS 8M x 16 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and a
2K EEPROM in 8-pin TSSOP package on a ...
The Samsung M464S1724DTS is a 16M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
M464S1724DTS consists of eight CMOS 8M x 16 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and a
2K EEPROM in 8-pin TSSOP package on a ...
The Rambus Direct RDRAM is a general purpose high-
performance memory device suitable for use in a broad
range of applications including communications, graphics,
video, and any other application where high bandwidth and
low latency are required.
The ...
The RDRAM device is a general purpose high-perfor-
mance memory device suitable for use in a broad range of
applications including communications, graphics, video and
any other application where high bandwidth and low latency
are required.
The 128Mbit ...
The RDRAM device is a general purpose high-perfor-
mance memory device suitable for use in a broad range of
applications including computer memory, graphics, video,
and any other application where high bandwidth and low
latency are required.
The ...
The Rambus Direct RDRAM is a general purpose high-
performance memory device suitable for use in a broad
range of applications including computer memory, graphics,
video, and any other application where high bandwidth and
low latency are required.
The ...
The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM ideally suited for the main memory applications which require large
memory density and high bandwidth. The HY57V56820C is organized as 4banks of 8,388,608x8.
The HY57V56820C is offering fully ...
The Hynix HY57V281620HC(L)T is a 134,217,728bit CMOS Synchronous DRAM ideally suited for the main memory applications
which require large memory density and high bandwidth. HY57V281620HC(L)T is organized as 4banks of 2,097,152x16
HY57V281620HC(L)T is ...
The HY57V56820B is a 268,435,456bit CMOS Synchronous DRAM ideally suited for the main memory applications which require large
memory density and high bandwidth. The HY57V56820B is organized as 4banks of 8,388,608x8.
The HY57V56820B is offering fully ...
The ISSI IS41C8205 and IS41LV8205 are 2,097,152 x 8-bit high-
performance CMOS Dynamic Random Access Memory.
The Fast Page Mode allows 2,048 random accesses
within a single row with access cycle time as short as 20
ns per 4-bit word.
These features make ...
The ISSI IS41LV85125B is 512,288 x 8-bit high-performance
CMOS Dynamic Random Access Memories. Fast Page
Mode allows 1024 random accesses within a single row
with access cycle time as short as 12 ns per 8-bit word.
These features make the IS41LV85125B ...
The K4S563233F is 268,435,456 bits synchronous high data
rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,
fabricated with SAMSUNGs high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock ...
The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
KMM366S1623CT consists of sixteen CMOS 8M x 8 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and a
2K EEPROM in 8-pin TSSOP package on ...
