• Product pinout
  • Description
  • K4Y50044UE,TM 512Mbit XDR DRAM(E-die)
  • The timing diagrams in Figure 1 illustrate XDR DRAM device write and read transactions. There are three sets of pins used for normal memory access transactions: CFM/CFMN clock pins, RQ11..0 request pins, and DQ15..0/DQN15..0 data pins. The N appended ...
  • K4R761869A,? 576Mbit RDRAM (A-die)
  • , The RDRAM device is a general purpose high-perfor- mance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The ...
  • K4R881869E,288Mbit RDRAM 512K X 18bit X 32s Banks
  • 288Mbit RDRAM 512K x 18bit x 32s banks , K4R881869E The 288Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1200 MHz transfer rates while using ...
  • K4R271669H,128Mbit RDRAM 256K X 16 Bit X 32s Banks
  • K4R271669H The 128Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 8M words by 16. The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design technologies. ...
  • MSM51V18165F,MSM51V18165F4M X 4 DRAM FPM
  • The MSM51V18165F is a 1,048,576-word x 16-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM51V18165F achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a ...
  • MSM5412222,MSM5412222256K X 12 Field Memory
  • The MSM5412222 is a high performance 3-Mbit, 256K x 12-bit, Field Memory. It is especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and Multi-media systems. MSM5412222 is a FRAM for ...
  • MSM5416273,262,144-Word ?16-Bit Multiport DRAM
  • The MSM5416273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and asynchronously. The MSM5416273 supports three types of operations: random access ...
  • MSM5416282,MSM5416282256K X 16 VRAM FPM 2WE
  • The MSM5416282 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, ...
  • MSM5416283,MSM5416283256K X 16 Multiport DRAM
  • The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. The MSM5416283 supports three types of operations: random access to ...
  • MSM548262,262,144-Word ?8-Bit Multiport DRAM
  • The MSM548262 is a 2-Mbit CMOS multiport DRAM composed of a 262,144-word by 8-bit dynamic RAM and a 512-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed ...
  • MSM548263,MSM548263256K X 8 Multiport DRAM
  • The MSM548263 is a 2-Mbit CMOS multiport DRAM composed of a 262,144-word by 8-bit dynamic RAM, and a 512-word by 8-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high ...
  • MSM548331,MSM548331256K X 12 Field Memory
  • The MSM548331 is a 2.7-Mbit, 768 bits x 290 lines, Field Memory. Access is done line by line. The line address must be set each time a line is changed. More than two MSM548331s can be cascaded directly without any delay devices between them. Cascading ...
  • MSM548332,278,400-Word ?12-Bit Field Memory
  • The MSM548332 is a 3.3-Mbit, 960 bits x 290 lines, Field Memory. Access is done line by line. The line address must be set each time a line is changed. More than two MSM548332s can be cascaded directly without any delay devices between them. Cascading ...
  • MSM54V16273,MSM54V16273256K X 16 DRAM
  • The MSM54V16273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, ...
  • MSM54V16283,262,144-Word ?16-Bit Multiport DRAM
  • The MSM54V16283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high ...
  • MSM5116160D,MSM5116160D1M X 16 DRAM FPM
  • The MSM5116160D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki\'s silicon-gate CMOS technology. The MSM5116160D/DSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a ...
  • MSM5116165D,MSM5116165D1M X 16 DRAM EDO
  • The MSM5116165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki\'s silicon-gate CMOS technology. The MSM5116165D/DSL achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a ...
  • MSM5117405D,MSM5117405D4M X 4 DRAM EDO
  • The MSM5117405D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki\'s silicon-gate CMOS technology. The MSM5117405D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer ...
  • MSM5118160D,MSM5118160D1M X 16 DRAM FPM
  • The MSM5118160D/ MSM5118160DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki\'s silicon-gate CMOS technology. The MSM5118160D/ MSM5118160DSL achieves high integration, high-speed operation, and low-power consumption because Oki ...
  • MSM5416258B,MSM5416258B256K X 16 DRAM EDO
  • The MSM5416258B is a 262,144-word x 16-bit dynamic RAM fabricated in OKI\'s CMOS silicon gate technology. The MSM5416258B achieves high integration,high-speed operation,and low-power consumption due to quadruple polysilicon double metal CMOS. The ...
  • MSM54V16258B,Dynamic RAM
  • The MSM54V16258B is a 262,144-word x 16-bit dynamic RAM fabricated in Oki\'s silicon-gate CMOS technology. The MSM54V16258B/BSL achieves high integration, high-speed operation, and low-power consumption due to quadruple polysilicon double metal CMOS. ...
  • MSM51V4800E,2M–Wordx 16–Bit Or 4M–Worx 8–Bit P2ROM
  • The MR27V3102L is a 32Mbit Production Programmed Read Only Memory (P2ROM) with 64 bytes ID block. It offers capability for unique ID in each P2ROM. It is ideal for applications that require storage common data and unique ID in each device. ...
  • MSM51V4265E,4M–Word× 16–Bit Or 8M–Wor× 8–Bi P2ROM
  • The MR27V6302L is a 64Mbit Production Programmed Read Only Memory (P2ROM) with 64 bytes ID block. It offers capability for unique ID in each P2ROM. It is ideal for applications that require storage common data and unique ID in each device. ...
  • IS41LV16256B,256K X 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
  • The ISSI IS41LV16256B is 262,144 x 16-bit high-perfor- mance CMOS Dynamic Random Access Memory. Both prod- ucts offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as ...
  • IS41LV44002B,4M X 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
  • The ISSI IS41LV44002B is 4,194,304 x 4-bit high-perfor- mance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random ac- cesses within a single row with access cycle time ...
  • IS41LV16100B,1M X 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
  • The ISSI IS41LV16100B is 1,048,576 x 16-bit high-perfor- mance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random ac- cesses within a single row with access cycle ...
  • IS42S81600E,16M X 8, 8M X16 128Mb SYNCHRONOUS DRAM
  • 's 128Mb Synchronous DRAM achieves high-speed ISSI data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized as follows. ...
  • IS41C16256,256K X 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
  • The ISSI IS41C16256 and IS41LV16256 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. Both products offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time ...
  • IS41C16257,256K X 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
  • The ISSI IS41C16257 and the IS41LV16257 are 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as short as 12 ns per 16-bit word. The Byte Write ...
  • IS41C44002,4M X 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
  • The IS41C4400 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 or 4096 random accesses within a single row with access ...
  • IS41C44052,4M X 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
  • The IS41C44052 IS41C44054 IS41LV44052 IS41LV44054 Series is a 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. The Fast Page Mode allows 2,048 or 4096 random accesses within a single row with access cycle time as short as 20 ...
  • IS41C8200,2M X 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
  • The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high- performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access ...
  • IS41C16100,1M X 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
  • The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with ...
  • IS41C16105,1M X 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
  • The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo- ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write ...
  • T2316160A,1024K X 16 DYNAMIC RAM
  • The T2316160A is a randomly accessed solid state memory containing 16,777,216 bits organized in a x16 configuration. The T2316160A has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode with Extended Data Output. ...
  • T2316162A,1024K X 16 DYNAMIC RAM
  • The T2316162A is a randomly accessed solid state memory containing 16,777,216 bits organized in a x16 configuration. The T2316162A has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode with Extended Data Output. ...
  • A42L0616,1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
  • The A42L0616 is a new generation randomly accessed memory for graphics, organized in a 1,048,576-word by 16-bit configuration. This product can execute Byte Write and Byte Read operation via two CAS pins. The A42L0616 offers an accelerated Fast Page ...
  • A428316,256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
  • The A428316 is a new generation randomly accessed memory for graphics, organized in a 262,144-word by 16- bit configuration. This product can execute Byte Write and Byte Read operation via two CAS pins. The A428316 offers an accelerated Fast Page Mode ...
  • A42L8316,256K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
  • The A42L8316 is a new generation randomly accessed memory for graphics, organized in a 262,144-word by 16- bit configuration. This product can execute Byte Write and Byte Read operation via two CAS pins. The A42L8316 offers an accelerated Fast Page ...
  • K4R271669D,128mbit Rdram(d-die) Semiconductor
  • The Rambus Direct RDRAM is a general purpose high- performance memory device suitable for use in a broad range of applications including communications, graphics, video, and any other application where high bandwidth and low latency are required. The ...
  • K4R271669E,128mbit Rdram(e-die) Semiconductor
  • The RDRAM device is a general purpose high-perfor- mance memory device suitable for use in a broad range of applications including communications, graphics, video and any other application where high bandwidth and low latency are required. The 128Mbit ...
  • K4R571669D,256/288mbit Rdram(d-die) Semiconductor
  • The RDRAM device is a general purpose high-perfor- mance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The ...
  • HY57V56820CT,4 Banks X 8m X 8bit Synchronous Dram
  • The HY57V56820C is a 268,435,456bit CMOS Synchronous DRAM ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820C is organized as 4banks of 8,388,608x8. The HY57V56820C is offering fully ...
  • HY57V281620HCT,4 Banks X 2m X 16bits Synchronous Dram
  • The Hynix HY57V281620HC(L)T is a 134,217,728bit CMOS Synchronous DRAM ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L)T is organized as 4banks of 2,097,152x16 HY57V281620HC(L)T is ...
  • HY57V56820BT,4 Banks X 8m X 8bit Synchronous Dram
  • The HY57V56820B is a 268,435,456bit CMOS Synchronous DRAM ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820B is organized as 4banks of 8,388,608x8. The HY57V56820B is offering fully ...
  • IS41LV85125B,512K X 8 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
  • The ISSI IS41LV85125B is 512,288 x 8-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1024 random accesses within a single row with access cycle time as short as 12 ns per 8-bit word. These features make the IS41LV85125B ...
  • K4S563233F,2M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA
  • The K4S563233F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock ...
  • KMM366S1623CT,PC100 SDRAM MODULE Preliminary
  • The Samsung KMM366S1623CT is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S1623CT consists of sixteen CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on ...