DS1230AB, DS1230Y 256k Nonvolatile SRAM

The DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices CAN be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs allowing direct substitution while enhancing performance. DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that CAN be executed and no additional support circuitry is required for Microprocessor interfacing.
By Maxim Integrated Products
DS1230Y 's PackagesDS1230Y 's pdf datasheet
DS1230YL-100
DS1230YL-70
DS1230Y-FIR
DS1230Y-150
DS1230Y-85
DS1230Y-200
DS1230Y-9B0120
DS1230Y-70
DS1230Y-120
DS1230Y-100
DS1230Y-120IND
DS1230Y-200IND
DS1230Y-70IND
DS1230YP-100
DS1230YP-70
DS1230YP-70IND




DS1230Y Pinout, Pinouts
DS1230Y pinout,Pin out
This is one package pinout of DS1230Y,If you need more pinouts please download DS1230Y's pdf datasheet.

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