Darlington Complementary
Silicon Power Transistors 2N6052
This package is designed for general-purpose amplifier and low
frequency switching applications. ...
Darlington Complementary
Silicon Power Transistors 2N6284
These packages are designed for general-purpose amplifier and
low-frequency switching applications. ...
Plastic Medium?Power
Silicon PNP Darlingtons This series BD676A of plastic, medium-power silicon PNP Darlington Transistors can be used as output devices in complementary general-purpose amplifier applications. ...
Darlington Complementary
Silicon Power Transistors BDW42
This series of plastic, medium-power silicon NPN and PNP
Darlington Transistors are designed for general purpose and low speed
switching applications. ...
Plastic Medium-Power
Complementary Silicon
Transistors BDX53B
These devices are designed for general-purpose amplifier and
low-speed switching applications. ...
This NPN small signal Darlington transistor BSP52 is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power surface mount ...
Power 2A 100V Darlington NPN MJD112 ,Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output o
driver stages in applications such as switching regulators, ...
NPN Darlington Transistor,This device BCV27 is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05.
...
NPN Darlington Transistor
This device MMBTA28 is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.
...
NPN Darlington Transistor
This device MMBT6427 is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
...
NPN Darlington Transistor,This device NZT7053 is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
...
NPN Darlington Transistor
This device MMBTA14 is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
...
PNP Darlington Transistor
This device MMBTA64 is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.
...
NPN Darlington Transistor
This device PZTA14 is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
...
This device 2N7052 is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
...
This device TN6725A is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced
from Process 05. See MPSA14 for characteristics.
...
NPN Darlington Transistor
This device 2N5172 is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.
...
NPN Darlington Transistor
This device 2N5308 is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
...
NPN Darlington Transistor
This device 2N6426 is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
...
NPN Darlington Transistor
This device MPSA29 is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics.
...
NPN Darlington Transistor
This device 2N6427 is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
...
This device MPSA63 is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
...
