• Product pinout
  • Description
  • 2N6052,Power 12A 100V Darlington PNP
  • Darlington Complementary Silicon Power Transistors 2N6052 This package is designed for general-purpose amplifier and low frequency switching applications. ...
  • 2N6284,Power 20A 100V Darlington NPN
  • Darlington Complementary Silicon Power Transistors 2N6284 These packages are designed for general-purpose amplifier and low-frequency switching applications. ...
  • BD676A,Power PNP 4A 45V
  • Plastic Medium?Power Silicon PNP Darlingtons This series BD676A of plastic, medium-power silicon PNP Darlington Transistors can be used as output devices in complementary general-purpose amplifier applications.
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  • BDV64B,Power 10A 100V PNP
  • Complementary Silicon Plastic Power Darlingtons BDV64B for use as output devices in complementary general purpose amplifier applications.
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  • BDW42,Power 15A 80V-100V NPN 85W
  • Darlington Complementary Silicon Power Transistors BDW42 This series of plastic, medium-power silicon NPN and PNP Darlington Transistors are designed for general purpose and low speed switching applications. ...
  • BSP52,NPN Small-Signal Darlington Transistor
  • This NPN small signal Darlington transistor BSP52 is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power surface mount ...
  • MJD112,Power 2A 100V Darlington NPN
  • Power 2A 100V Darlington NPN MJD112 ,Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output o driver stages in applications such as switching regulators, ...
  • MJD122,Power 8A 100V NPN
  • Complementary Darlington Power Transistor MJD122 Designed for general purpose amplifier and low speed switching applications.
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  • MJE700,Power 4A 60V PNPD
  • Plastic Darlington Complementary Silicon Power Transistors MJE700 designed for general-purpose amplifier and low-speed switching applications.
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  • TIP100,Power 8A 60V NPN
  • Plastic Medium-Power Complementary Silicon Transistors TIP100 Designed for general-purpose amplifier and low-speed switching applications. ...
  • TIP140,Power 10A 60V NPN
  • Darlington Complementary TIP140 Silicon Power Transistors Designed for general?purpose amplifier and low frequency switching applications. ...
  • KSH127,PNP Silicon Darlington Transistor
  • PNP Silicon Darlington Transistor KSH127 D-PAK for Surface Mount Applications
  • High DC Current Gain
  • Built-in a Damper Diode at E-C
  • Lead Formed for Surface Mount Applications (No Suffix)
  • Straight Lead (I-PAK, - I Suffi
  • ...
  • KSE800,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor KSE800 Monolithic Construction With Built-in Base- Emitter Resistors
  • High DC Current Gain : h = 750 (Min.) @ IC= 1.5 and 2.0A DC FE
  • Complement to KSE700/KSE701/KSE702/KSE703 ...
  • BCV27,NPN Darlington Transistor
  • NPN Darlington Transistor,This device BCV27 is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
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  • MMBTA13,NPN Darlington Transistor
  • NPN Darlington Transistor MMBTA13 NPN Darlington Transistor
  • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A.
  • Sourced from process 05.
  • See MPSA14 for characteristics. ...
  • TIP112,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor TIP112 Monolithic Construction With Built In B Emitter Shunt Resistors
  • Complementary to TIP115/116/117
  • High DC Current Gain : h =1000 @ V =4V, I =1A(Min.) FE CE C
  • Low Collector-Emitter Saturation ...
  • TIP147T,PNP Epitaxial Silicon Darlington Transistor
  • PNP Epitaxial Silicon Darlington Transistor TIP147T Monolithic Construction With Built In Base- Emitter Shunt Resistors
  • High DC Current Gain : h = 1000@ V = - 4V, I = - 5A (Min.) FE CE C
  • Industrial Use
  • Complement to TIP140T/141T/142T ...
  • MJD122,NPN Silicon Darlington Transistor
  • NPN Silicon Darlington Transistor MJD122 D-PAK for Surface Mount Applications
  • High DC Current Gain
  • Built-in a Damper Diode at E-C
  • Lead Formed for Surface Mount Applications (No Suffix)
  • Straight Lead (I-PAK, - I Suffi
  • ...
  • BU806,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor BU806 High Voltage & Fast Switching Darlington Transistor
  • Using In Horizontal Output Stages of 110
  • Crt Video Displays
  • BUILT-IN SPEED-UP Diode Between Base and Emitter ...
  • KSE45H,PNP Epitaxial Silicon Transistor
  • PNP Epitaxial Silicon Transistor KSE45H General Purpose Power Switching Applications
  • Low Collector-Emitter Saturation Voltage: V (sat) = -1V (MAX)@-8A CE
  • Fast Switching Speeds
  • Complement to KSE44H ...
  • KSH112,NPN Silicon Darlington Transistor
  • NPN Silicon Darlington Transistor KSH112 D-PAK for Surface Mount Applications
  • High DC Current Gain
  • Built-in a Damper Diode at E-C
  • Lead Formed for Surface Mount Applications (No Suffix)
  • Straight Lead (I-PAK, - I Suffi
  • ...
  • BD680A,PNP Epitaxial Silicon Transistor
  • PNP Epitaxial Silicon Transistor BD680A Medium Power Linear and Switching Applications
  • Medium Power Darlington TR
  • Complement to BD675A, BD677A, BD679A and BD681 respectively ...
  • MJD127,PNP Silicon Darlington Transistor
  • PNP Silicon Darlington Transistor MJD127 D-PAK for Surface Mount Applications
  • High DC Current Gain
  • Built-in a Damper Diode at E-C
  • Lead Formed for Surface Mount Applications (No Suffix)
  • Straight Lead (I-PAK, - I Suffi
  • ...
  • TIP142,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor TIP142 Monolithic Construction With Built In Bas Emitter Shunt Resistors
  • High DC Current Gain : h = 1000 @ V = 4V, I = 5A (Min.) FE CE C
  • Industrial Use
  • Complement to TIP145/TIP146/TIP147 ...
  • FJB102,100V High Voltage Power Darlington Transistor
  • 100V High Voltage Power Darlington Transistor FJB102
  • High DC Current Gain : h =1000 @ V =4V, I =3A (Min.) FE CE C
  • Low Collector-Emitter Saturation Voltage
  • High Collector-Emitter Sustaining Voltage
  • Monolithic Construction with Built-in ...
  • FJPF9020,PNP Epitaxial Darlington Transistor
  • PNP Epitaxial Darlington Transistor FJPF9020 Monolithic Construction With Built In Base-Emitter Shunt Resistors
  • High Collector-Base Breakdown Voltage : BV = -550V CBO
  • High DC Current Gain : h = 550 @ V = -4V, I = -1A (Typ.) FE CE ...
  • MJE800,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor MJE800 Monolithic Construction With Built-in Base- Emitter Resistors
  • High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC FE C
  • Complement to MJE700/MJE701/MJE702/MJE703 ...
  • TIP117,PNP Epitaxial Silicon Darlington Transistor
  • PNP Epitaxial Silicon Darlington Transistor TIP117 Monolithic Construction With Built In Base- Emitter Shunt Resistors
  • High DC Current Gain : h =1000 @ V = -4V, I = -1A (Min.) FE CE C
  • Low Collector-Emitter Saturation Voltage
  • Industrial ...
  • TIP115,PNP Epitaxial Silicon Darlington Transistor
  • PNP Epitaxial Silicon Darlington Transistor TIP115 Monolithic Construction With Built In Bas Emitter Shunt Resistors
  • High DC Current Gain : h =1000 @ V = -4V, I = -1A (Min.) FE CE C
  • Low Collector-Emitter Saturation Voltage
  • Industrial ...
  • KSH117,PNP Silicon Darlington Transistor
  • PNP Silicon Darlington Transistor KSH117 D-PAK for Surface Mount Applications
  • High DC Current Gain
  • Built-in a Damper Diode at E-C
  • Lead Formed for Surface Mount Applications (No Suffix)
  • Straight Lead (I-PAK, - I Suffi
  • ...
  • MMBTA28,NPN Darlington Transistor
  • NPN Darlington Transistor This device MMBTA28 is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03.
    ...
  • MMBT6427,NPN Darlington Transistor
  • NPN Darlington Transistor This device MMBT6427 is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
    ...
  • BCV26,PNP Darlington Transistor
  • This device BCV26 is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.
    ...
  • NZT7053,NPN Darlington Transistor
  • NPN Darlington Transistor,This device NZT7053 is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.
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  • MPSA13,NPN Darlington Transistor
  • NPN Darlington Transistor MPSA13 This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A ...
  • MMBTA14,NPN Darlington Transistor
  • NPN Darlington Transistor This device MMBTA14 is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
    ...
  • MMBTA64,PNP Darlington Transistor
  • PNP Darlington Transistor This device MMBTA64 is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.
    ...
  • TIP147F,PNP Epitaxial Darlington Transistor
  • PNP Epitaxial Darlington Transistor TIP147F Monolithic Construction With Built In Base- Emitter Shunt Resistors
  • High DC Current Gain : h = 1000 @ V = -4V, I = -5A (Min.) FE CE C
  • Industrial Use
  • Complement to TIP140F/TIP141F/TIP142F ...
  • TIP140,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor TIP140 Monolithic Construction With Built In Base- Emitter Shunt Resistors
  • High DC Current Gain : h = 1000 @ V = 4V, I = 5A (Min.) FE CE C
  • Industrial Use
  • Complement to TIP145/TIP146/TIP147 ...
  • TIP100,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor TIP100 Monolithic Construction With Built In Base- Emitter Shunt Resistors
  • High DC Current Gain : h =1000 @ V =4V, I =3A (Min.) FE CE C
  • Collector-Emitter Sustaining Voltage
  • Low Collector-Emitter ...
  • NZT605,NPN Darlington Transistor
  • NPN Darlington Transistor NZT605
  • This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. ...
  • PZTA14,NPN Darlington Transistor
  • NPN Darlington Transistor This device PZTA14 is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
    ...
  • 2N7052,NPN Darlington Transistor
  • This device 2N7052 is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06.
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  • TN6725A,NPN Darlington Transistor
  • This device TN6725A is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics.
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  • BDX54B,NPN Epitaxial Silicon Transistor
  • NPN Epitaxial Silicon Transistor BDX54B Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications
  • Power Darlington TR
  • Complement to BDX53, BDX53A, BDX53B and BDX53C respectively ...
  • BDX33B,NPN Epitaxial Silicon Transistor
  • NPN Epitaxial Silicon Transistor BDX33B Power Linear and Switching Applications
  • High Gain General Purpose
  • Power Darlington TR
  • Complement to BDX34/BDX34A/BDX34B/BDX34C respectively ...
  • KSE803,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor KSE803 Monolithic Construction With Built-in Base- Emitter Resistors
  • High DC Current Gain : h = 750 (Min.) @ IC= 1.5 and 2.0A DC FE
  • Complement to KSE700/KSE701/KSE702/KSE703 ...
  • KSE802,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor KSE802 Monolithic Construction With Built-in Base- Emitter Resistors
  • High DC Current Gain : h = 750 (Min.) @ IC= 1.5 and 2.0A DC FE
  • Complement to KSE700/KSE701/KSE702/KSE703 ...
  • KSE801,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor KSE801 Monolithic Construction With Built-in Base- Emitter Resistors
  • High DC Current Gain : h = 750 (Min.) @ IC= 1.5 and 2.0A DC FE
  • Complement to KSE700/KSE701/KSE702/KSE703 ...
  • BU807,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor BU807 High Voltage & Fast Switching Darlington Transistor
  • Using In Horizontal Output Stages of 110
  • Crt Video Displays
  • BUILT-IN SPEED-UP Diode Between Base and Emitter ...
  • TIP142F,NPN Epitaxial Darlington Transistor
  • NPN Epitaxial Darlington Transistor TIP142F Monolithic Construction With Built In Base- Emitter Shunt Resistors
  • Complement to TIP145F/146F/147F
  • High DC Current Gain : h = 1000 @ V = 4V, I = 5A (Min.) FE CE C
  • Industrial Use ...
  • MJE803,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor MJE803 Monolithic Construction With Built-in Base- Emitter Resistors
  • High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC FE C
  • Complement to MJE700/701/702/703 ...
  • MJE802,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor MJE802 Monolithic Construction With Built-in Base- Emitter Resistors
  • High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC FE C
  • Complement to MJE700/MJE701/MJE702/MJE703 ...
  • MJE801,NPN Epitaxial Silicon Darlington Transistor
  • NPN Epitaxial Silicon Darlington Transistor MJE801 Monolithic Construction With Built-in Base- Emitter Resistors
  • High DC Current Gain : h = 750 (Min.) @ I = 1.5 and 2.0A DC FE C
  • Complement to MJE700/MJE701/MJE702/MJE703 ...
  • 2N5172,NPN General Purpose Amplifier
  • NPN Darlington Transistor This device 2N5172 is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.
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  • 2N5308,NPN Darlington Transistor
  • NPN Darlington Transistor This device 2N5308 is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
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  • 2N6426,NPN Darlington Transistor
  • NPN Darlington Transistor This device 2N6426 is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
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  • MPSA77,PNP Darlington Transistor
  • PNP Darlington Transistor MPSA77
  • This device is designed for applications requiring extremely high current gain at currents to 800mA. ...
  • BC517,NPN Darlington Transistor
  • NPN Darlington Transistor BC517 This device BC517 is designed for applications requiring extremely high current gain at currents to 1.0A. ...
  • BC516,PNP Darlington Transistor
  • PNP Darlington Transistor BC516 This device is designed for applications reguiring extremely high current gain at currents to 1mA. ...
  • MPSA29,NPN Darlington Transistor
  • NPN Darlington Transistor This device MPSA29 is designed for applications requiring extremely high current gain at collector currents to 500 mA. Sourced from Process 03. See MPSA28 for characteristics.
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  • 2N6427,NPN Darlington Transistor
  • NPN Darlington Transistor This device 2N6427 is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.
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  • MPSA63,PNP Darlington Transistor
  • This device MPSA63 is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
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