512M Bits XDR™ DRAM

The EDX5116ADSE is a 512M bits XDR DRAM organized as 32M words 16 bits. It is a general-purpose high-perfor- mance memory device suitable for use in a broad range of applications. The use of Differential Rambus Signaling Level (DRSL) tech- nology permits 4000/3200 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are capable of sustained data transfers of 8000/6400 MB/s. XDR DRAM device architecture allows the highest sustained bandwidth for multiple, interleaved randomly addressed mem- ory transactions. The highly-efficient protocol yields over 95% utilization while allowing fine access granularity. The devices eight banks support up to four interleaved transactions. It is packaged in 104-ball FBGA compatible with Rambus XDR DRAM pin configuration. By Elpida Memory, Inc.
EDX5116ADSE 's PackagesEDX5116ADSE 's pdf datasheet
EDX5116ADSE-4D-E
EDX5116ADSE-3C-E
EDX5116ADSE-3B-E
EDX5116ADSE-3A-E




EDX5116ADSE Pinout, Pinouts
EDX5116ADSE pinout,Pin out
This is one package pinout of EDX5116ADSE,If you need more pinouts please download EDX5116ADSE's pdf datasheet.

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