512M Bits XDR™ DRAM

The EDX5116ADSE is a 512M bits XDR DRAM organized as 32M words 16 bits. It is a general-purpose high-perfor- mance memory device suitable for use in a broad range of applications. The use of Differential Rambus Signaling Level (DRSL) tech- nology permits 4000/3200 Mb/s transfer rates while using conventional system and board design technologies. XDR DRAM devices are capable of sustained data transfers of 8000/6400 MB/s. XDR DRAM device architecture allows the highest sustained bandwidth for multiple, interleaved randomly addressed mem- ory transactions. The highly-efficient protocol yields over 95% utilization while allowing fine access granularity. The devices eight banks support up to four interleaved transactions. It is packaged in 104-ball FBGA compatible with Rambus XDR DRAM pin configuration. By Elpida Memory, Inc.
EDX5116ADSE 's PackagesEDX5116ADSE 's pdf datasheet

EDX5116ADSE Pinout, Pinouts
EDX5116ADSE pinout,Pin out
This is one package pinout of EDX5116ADSE,If you need more pinouts please download EDX5116ADSE's pdf datasheet.

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