1M X 16 Bit Synchronous DRAM (SDRAM)

The EM636165 SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous Interface (all signals are registered on the positive edge of the Clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The EM636165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode Register the system CAN choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications By Etron Technology Inc.
EM636165 's PackagesEM636165 's pdf datasheet
EM636165VE-55G
EM636165VE-6G
EM636165VE-7G
EM636165VE-7LG
EM636165TS-55G
EM636165TS-6G
EM636165TS-7G
EM636165TS-7LG




EM636165 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
EM636165 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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EM636165 Application Notes EM636165 RoHS EM636165 Circuits EM636165 footprint
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