4M X 16 Bit Synchronous DRAM (SDRAM)

The EM638165 SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous Interface (all signals are registered on the positive edge of the Clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The EM638165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode Register the system CAN choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. By Etron Technology Inc.
EM638165 's PackagesEM638165 's pdf datasheet
EM638165VE-5G
EM638165VE-6G
EM638165VE-7G
EM638165TS-5G
EM638165TS-6G
EM638165TS-7G




EM638165 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
EM638165 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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EM638165 Application Notes EM638165 RoHS EM638165 Circuits EM638165 footprint
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