8M X 16 Bit Synchronous DRAM (SDRAM)

The EM639165 SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is internally configured as 4 Banks of 2M word x 16 DRAM with a synchronous Interface (all signals are registered on the positive edge of the Clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The EM639165 provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By Etron Technology Inc.
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EM639165 Pinout, Pinouts
EM639165 pinout,Pin out
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EM639165 Application Notes EM639165 RoHS EM639165 Circuits EM639165 footprint
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