2 Megabit (256k X 8-bit) Flash Memory

The EN29F002 / EN29F002N is a 2-Megabit, electrically erasable, read/write non-volatile Flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main sectors (one 32K Byte and three 64K Byte). Any byte CAN be programmed typically at 10s. The EN29F002 / EN29F002N features 5.0V voltage read and write operation. The access times are as fast as 45ns to eliminate the need for WAIT states in high-performance Microprocessor systems. The EN29F002 / EN29F002N has separate Output Enable (OE), Chip Enable (CE), and Write Enable (WE ) controls which eliminate bus contention issues. This device is designed to allow either single sector or full chip erase operation, where each sector CAN be individually protected against program/erase operations or temporarily unprotected to erase or program. The device CAN sustain a minimum of 100K program/erase cycles on each sector. By Unkown
EN29F002 's PackagesEN29F002 's pdf datasheet
EN29F002N




EN29F002 Pinout, Pinouts
EN29F002 pinout,Pin out
This is one package pinout of EN29F002,If you need more pinouts please download EN29F002's pdf datasheet.

EN29F002 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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EN29F002 Application Notes EN29F002 RoHS EN29F002 Circuits EN29F002 footprint
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