8 Megabit (1024k X 8-bit) Flash Memory

The EN29F080 is a 8-Megabit, electrically erasable, read/write non-volatile Flash memory. Organized into 1024K words with 8 bits per word, the 8M of memory is arranged in eight uniform sectors of 64Kbytes each. Any byte CAN be programmed typically in 10s. The EN29F080 features 5.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance Microprocessor systems. The EN29F080 has separate Output Enable (OE), Chip Enable (CE), and Write Enable (WE ) controls, which eliminate bus contention issues. This device is designed to allow either single (or multiple) Sector or full chip erase operation, where each Sector CAN be individually protected against program/erase operations or temporarily unprotected to erase or program. The device CAN sustain a minimum of 100K program/erase cycles on each Sector. By Unkown
EN29F080 's PackagesEN29F080 's pdf datasheet

EN29F080 Pinout, Pinouts
EN29F080 pinout,Pin out
This is one package pinout of EN29F080,If you need more pinouts please download EN29F080's pdf datasheet.

EN29F080 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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EN29F080 Pb-Free EN29F080 Cross Reference EN29F080 Schematic EN29F080 Distributor
EN29F080 Application Notes EN29F080 RoHS EN29F080 Circuits EN29F080 footprint
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