200V N-Channel PowerTrench MOSFET

This N-Channel MOSFET FDB2614 is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
62A, 200V, RDS(on) = 22.9m& @VGS = 10 V Fast switching speed Low Gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability
By Fairchild Semiconductor
FDB2614 's PackagesFDB2614 's pdf datasheet



FDB2614 Pinout, Pinouts
FDB2614 pinout,Pin out
This is one package pinout of FDB2614,If you need more pinouts please download FDB2614's pdf datasheet.

FDB2614 Application circuits
FDB2614 circuits
This is one application circuit of FDB2614,If you need more circuits,please download FDB2614's pdf datasheet.


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