250V N-Channel PowerTrench MOSFET
This N-Channel MOSFET FDB2710 is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
50A, 250V, RDS(on) = 36.3m& @VGS = 10 V Fast switching speed Low Gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability
By Fairchild Semiconductor
|FDB2710||Fairchild Semiconductor Corporation||N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL|
|FDB2710 Pb-Free||FDB2710 Cross Reference||FDB2710 Schematic||FDB2710 Distributor|
|FDB2710 Application Notes||FDB2710 RoHS||FDB2710 Circuits||FDB2710 footprint|