250V N-Channel PowerTrench MOSFET

This N-Channel MOSFET FDB2710 is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
50A, 250V, RDS(on) = 36.3m& @VGS = 10 V Fast switching speed Low Gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability
By Fairchild Semiconductor
FDB2710 's PackagesFDB2710 's pdf datasheet

FDB2710 Pinout, Pinouts
FDB2710 pinout,Pin out
This is one package pinout of FDB2710,If you need more pinouts please download FDB2710's pdf datasheet.

FDB2710 Application circuits
FDB2710 circuits
This is one application circuit of FDB2710,If you need more circuits,please download FDB2710's pdf datasheet.

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