30V Integrated N-Channel PowerTrenchMOSFET And Schottky Diode

This device FDFMA3N109 is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low input capacitance, total Gate charge and onstate resistance, and an independently connected Schottky Diode with low forward voltage and reverse leakage current to maximize boost efficiency.
The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
By Fairchild Semiconductor
FDFMA3N109 's PackagesFDFMA3N109 's pdf datasheet



FDFMA3N109 Pinout, Pinouts
FDFMA3N109 pinout,Pin out
This is one package pinout of FDFMA3N109,If you need more pinouts please download FDFMA3N109's pdf datasheet.

FDFMA3N109 Application circuits
FDFMA3N109 circuits
This is one application circuit of FDFMA3N109,If you need more circuits,please download FDFMA3N109's pdf datasheet.


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