30V N-Channel MOSFET With Schottky DiodeThe FDFS6N303 incorporates a high cell density MOSFET
and low forward drop (0.35V) Schottky Diode into a single
surface mount power package. The MOSFET and Schottky Diode are isolated inside the package. The general purpose
pinout has been chosen to maximize flexibility and
ease of use. This product is particularly suited for switching
applications such as DC/DC buck, boost, synchronous,
and non-synchronous converters where the MOSFET is driven
as low as 4.5V and fast switching, high efficiency and
small PCB footprint is desirable.
By Fairchild Semiconductor |
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| FDFS6N303 Pb-Free | FDFS6N303 Cross Reference | FDFS6N303 Schematic | FDFS6N303 Distributor |
| FDFS6N303 Application Notes | FDFS6N303 RoHS | FDFS6N303 Circuits | FDFS6N303 footprint |
