Digital FET - P-Channel

This P-Channel enhancement mode field effect thransistor FDG314P is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low Gate drive conditions. This device is designed especially for battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at Gate drive voltages as low as 2.5 volts.
By Fairchild Semiconductor
FDG314P 's PackagesFDG314P 's pdf datasheet

FDG314P Pinout, Pinouts
FDG314P pinout,Pin out
This is one package pinout of FDG314P,If you need more pinouts please download FDG314P's pdf datasheet.

FDG314P Application circuits
FDG314P circuits
This is one application circuit of FDG314P,If you need more circuits,please download FDG314P's pdf datasheet.

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