25V Dual N-Channel, Digital FETThese dual N-Channel Logic level enhancement mode
Field Effect Transistors FDG6313N are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital Transistors and small
signal MOSFETs
By Fairchild Semiconductor |
|
|
| FDG6313N Pb-Free | FDG6313N Cross Reference | FDG6313N Schematic | FDG6313N Distributor |
| FDG6313N Application Notes | FDG6313N RoHS | FDG6313N Circuits | FDG6313N footprint |
