25V Dual N-Channel, Digital FET

These dual N-Channel Logic level enhancement mode Field Effect Transistors FDG6313N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital Transistors and small signal MOSFETs
By Fairchild Semiconductor
FDG6313N 's PackagesFDG6313N 's pdf datasheet



FDG6313N Pinout, Pinouts
FDG6313N pinout,Pin out
This is one package pinout of FDG6313N,If you need more pinouts please download FDG6313N's pdf datasheet.

FDG6313N Application circuits
FDG6313N circuits
This is one application circuit of FDG6313N,If you need more circuits,please download FDG6313N's pdf datasheet.


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