30V Dual N-Channel PowerTrench MOSFET

This dual N-Channel Logic level enhancement mode field effect Transistors FDG8850NZ are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital Transistors and small signal MOSFETs Since bias resistors are not required, this dual digital FET CAN replace several different digital Transistors with different bias resistor values.
By Fairchild Semiconductor
FDG8850NZ 's PackagesFDG8850NZ 's pdf datasheet

FDG8850NZ Pinout, Pinouts
FDG8850NZ pinout,Pin out
This is one package pinout of FDG8850NZ,If you need more pinouts please download FDG8850NZ's pdf datasheet.

FDG8850NZ Application circuits
FDG8850NZ circuits
This is one application circuit of FDG8850NZ,If you need more circuits,please download FDG8850NZ's pdf datasheet.

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