P-Channel Logic Level Enhancement Mode Field Effect TransistorSuperSOTTM
-8 P-Channel enhancement mode power field
effect Transistor FDR856P s are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as battery powered circuits or
portable electronics where low in-line power loss, fast
switching and resistance to transients are needed. By Fairchild Semiconductor
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| FDR856P Pb-Free | FDR856P Cross Reference | FDR856P Schematic | FDR856P Distributor |
| FDR856P Application Notes | FDR856P RoHS | FDR856P Circuits | FDR856P footprint |
