Dual N-Channel Enhancement Mode Field Effect TransistorSO-8 N-Channel enhancement mode power field effect
Transistors FDS8936A are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer Power Management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed. By Fairchild Semiconductor
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FDS8936A Pb-Free | FDS8936A Cross Reference | FDS8936A Schematic | FDS8936A Distributor |
FDS8936A Application Notes | FDS8936A RoHS | FDS8936A Circuits | FDS8936A footprint |