300V, PT N-Channel IGBT, TO-247 Package

The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and Bipolar Transistors These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a Bipolar Transistor The much lower on-state voltage drop varies only moderately between 25C and 150C.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency Switch mode power supplies.
Formerly Developmental Type TA49485
By Fairchild Semiconductor
FGH50N3 's PackagesFGH50N3 's pdf datasheet



FGH50N3 Pinout, Pinouts
FGH50N3 pinout,Pin out
This is one package pinout of FGH50N3,If you need more pinouts please download FGH50N3's pdf datasheet.

FGH50N3 Application circuits
FGH50N3 circuits
This is one application circuit of FGH50N3,If you need more circuits,please download FGH50N3's pdf datasheet.


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