Electrical Characteristics Of IGBT

Insulated Gate Bipolar Transistors (IGBTs) FGL60N100D with trench Gate structure have superior performance in conduction and switching to planar Gate structure, and also have wide noise immunity. These devices are well suitable for IH applications By Fairchild Semiconductor
FGL60N100D 's PackagesFGL60N100D 's pdf datasheet

FGL60N100D Pinout, Pinouts
FGL60N100D pinout,Pin out
This is one package pinout of FGL60N100D,If you need more pinouts please download FGL60N100D's pdf datasheet.

FGL60N100D Application circuits
FGL60N100D circuits
This is one application circuit of FGL60N100D,If you need more circuits,please download FGL60N100D's pdf datasheet.

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