4-4 Schottky Barrier Diodes |
|
| Part | Manufacturer | Description | Datasheet | Samples | |
|---|---|---|---|---|---|
| R5F5210ABDFP#30 | Renesas Electronics Corporation |
|
|||
| R5F5210ABDFB#30 | Renesas Electronics Corporation |
|
|||
| R5F5210ABDLJ#U0 | Renesas Electronics Corporation |
|
|||
| R5F5210ABDLK#U0 | Renesas Electronics Corporation |
|
|||
| R5F5210ABGFB#30 | Renesas Electronics Corporation |
|
|||
| R5F5210ABDFP#V0 | Renesas Electronics Corporation | The RX210 Group has a wide operating voltage range of 1.62 V to 5.5 V and can execute calculations at 78 DMIPS at up to 50 MHz high-speed operation. Furthermore, it achieves 0.2 mA/MHz low power performance when operating at 50 MHz. |
|
||
| R5F5210ABDFB#V0 | Renesas Electronics Corporation | The RX210 Group has a wide operating voltage range of 1.62 V to 5.5 V and can execute calculations at 78 DMIPS at up to 50 MHz high-speed operation. Furthermore, it achieves 0.2 mA/MHz low power performance when operating at 50 MHz. |
|
||
| R5F5210ABGFP#30 | Renesas Electronics Corporation |
|
|||
| ISL43210AIHZ-T7A | Renesas Electronics Corporation | $ Fully specified at 12V, 5V, and 3.3V supplies for 10% tolerances $ ON-resistance (rON): 11Ω $ rON matching between channels: <1Ω $ Low charge injection: 5pC $ Single supply operation: +2.7V to +15V $ Low leakage current: 10nA $ Fast switching action $$ tON: 25ns $$ tOFF: 17ns $ Guaranteed break-before-make switching $ Minimum 2000V ESD protection per method 3015.7 $ TTL, CMOS compatible $ Available in 6 Ld SOT-23 package $ Pb-free (RoHS compliant) |
|
||
| ISL55210-ABEVAL1Z | Renesas Electronics Corporation | High Speed Differential Amplifier in a Active Balun Configuration Evaluation Board |
|
|
| FMEN-210A Pb-Free | FMEN-210A Cross Reference | FMEN-210A Schematic | FMEN-210A Distributor |
| FMEN-210A Application Notes | FMEN-210A RoHS | FMEN-210A Circuits | FMEN-210A footprint |
