0.75W Power PHEMT FPD1050

The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 1050 m Schottky barrier Gate defined by high -resolution stepper-based photolithography. The double recessed Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD1050 is also available in the low cost plastic SOT89 package.
By RF Micro Devices
FPD1050 's PackagesFPD1050 's pdf datasheet



FPD1050 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
FPD1050 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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