1W Power PHEMT FPD1500The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 1500 m Schottky barrier Gate defined by high -resolution stepper-based photolithography. The recessed Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD1500 is also available in the low cost plastic SOT89 and DFN packages.
By RF Micro Devices |
|
|
| FPD1500 Pb-Free | FPD1500 Cross Reference | FPD1500 Schematic | FPD1500 Distributor |
| FPD1500 Application Notes | FPD1500 RoHS | FPD1500 Circuits | FPD1500 footprint |
Add Datasheet to Frame-It
