Low Noise High Linearity Packaged PHEMT FPD1500SOT89E

The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier Gate defined by high-resolution stepper-based photolithography. The double recessed Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels.
By RF Micro Devices
FPD1500SOT89E 's PackagesFPD1500SOT89E 's pdf datasheet



FPD1500SOT89E Pinout, Pinouts
FPD1500SOT89E pinout,Pin out
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