Low Noise High Linearity Packaged PHEMT FPD1500SOT89E

The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 1500 m Schottky barrier Gate defined by high-resolution stepper-based photolithography. The double recessed Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels.
By RF Micro Devices
FPD1500SOT89E 's PackagesFPD1500SOT89E 's pdf datasheet

FPD1500SOT89E Pinout, Pinouts
FPD1500SOT89E pinout,Pin out
This is one package pinout of FPD1500SOT89E,If you need more pinouts please download FPD1500SOT89E's pdf datasheet.

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