1.5W Power PHEMT FPD2250

The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 2250 m Schottky barrier Gate defined by high -resolution stepper-based photolithography. The recessed Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD2250 is also available in the low cost plastic SOT89 package.
By RF Micro Devices
FPD2250 's PackagesFPD2250 's pdf datasheet



FPD2250 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
FPD2250 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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