Low Noise High Linearity Packaged PHEMT FPD2250SOT89E

The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 250 m Schottk barrier Gate defined by high-resolution stepper-based photolithography. The double recessed Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and i/p power levels. By RF Micro Devices
FPD2250SOT89E 's PackagesFPD2250SOT89E 's pdf datasheet



FPD2250SOT89E Pinout, Pinouts
FPD2250SOT89E pinout,Pin out
This is one package pinout of FPD2250SOT89E,If you need more pinouts please download FPD2250SOT89E's pdf datasheet.

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