0.5W Power PHEMT FPD750

The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 750 m Schottky barrier Gate defined by high-resolution stepper-based photolithography. The double recessed Gate structure minimizes parasitics to optimize performance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FPD750 also features Si3N4 passivation and is available in the low cost plastic SOT89 SOT343 and DFN packages.
By RF Micro Devices
FPD750 's PackagesFPD750 's pdf datasheet



FPD750 Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
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